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D. S. Truesdell, Breiholz, J., Kamineni, S., Liu, N. X., Magyar, A., and Calhoun, B. H., โ€œA 6โ€“140-nW 11 Hzโ€“8.2-kHz DVFS RISC-V Microprocessor Using Scalable Dynamic Leakage-Suppression Logicโ€, IEEE Solid-State Circuits Letters (SSCL), 2019.PDF icon A 6โ€“140-nW 11 Hzโ€“8.2-kHz DVFS RISC-V Microprocessor Using Scalable Dynamic Leakage-Suppression Logic (1.63 MB)
D. S. Truesdell and Calhoun, B. H., โ€œA Single-Supply 6-Transistor Voltage Level Converter Design Reaching 8.18-fJ/Transition at 0.3-1.2-V Range or 44-fW Leakage at 0.8-2.5-V Rangeโ€, IEEE Solid-State Circuits Letters (SSCL), 2020.PDF icon A Single-Supply 6-Transistor Voltage Level Converter Design Reaching 8.18-fJ_Transition at 0.3-1.2-V Range or 44-fW Leakage at 0.8-2.5-V Range.pdf (1.06 MB)
D. S. Truesdell and Calhoun, B. H., โ€œA 640 pW 22 pJ/sample Gate Leakage-Based Digital CMOS Temperature Sensor with 0.25ยฐC Resolutionโ€, in IEEE Custom Integrated Circuits Conference (CICC) 2019, Austin, TX, 2019.PDF icon A 640 pW 22 pJ_sample Gate Leakage-Based Digital CMOS Temperature Sensor with 0.25C Resolution.pdf (1.81 MB)
D. S. Truesdell, Li, S., and Calhoun, B. H., โ€œA 0.5V 560-kHz 18.8-fJ/Cycle On-Chip Oscillator with 96.1-ppm/ยฐC Steady-State Stability Using a Duty-Cycled Digital Frequency-Locked Loopโ€, IEEE Journal of Solid-State Circuits, 2021.PDF icon A 0.5-V 560-kHz 18.8-fJ_Cycle On-Chip Oscillator With 96.1ppm_C Steady-State Stability Using a Duty-Cycled Digital Frequency-Locked Loop.pdf (2.95 MB)
D. S. Truesdell and Calhoun, B. H., โ€œImproving Dynamic Leakage Suppression Logic with Forward Body Bias in 65nm CMOSโ€, in IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2019.
D. S. Truesdell, Liu, X., Breiholz, J., Gupta, S., Li, S., and Calhoun, B. H., โ€œNanoWattch: A Self-Powered 3-nW RISC-V SoC Operable from 160mV Photovoltaic Input with Integrated Temperature Sensing and Adaptive Performance Scalingโ€, in 2022 IEEE Symposium on VLSI Circuits (VLSI), (Equally-Credited Authors), 2022.PDF icon NanoWattch A Self-Powered 3-nW RISC-V SoC Operable from 160mV Photovoltaic Input with Integrated Temperature Sensing and Adaptive Performance Scaling.pdf (11.11 MB)
D. S. Truesdell and Calhoun, B. H., โ€œChannel Length Sizing for Power Minimization in Leakage-Dominated Digital Circuitsโ€, in IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2018.
D. S. Truesdell, Ahmed, S. Z., Ghosh, A. W., and Calhoun, B. H., โ€œMinimum-Energy Digital Computing with Steep Subthreshold Swing Tunnel FETsโ€, IEEE Journal of Exploratory Solid-State Computational Devices and Circuits (JxCDC), 2020.PDF icon Minimum-Energy Digital Computing With Steep Subthreshold Swing Tunnel FETs.pdf (1.02 MB)
D. S. Truesdell, Li, S., and Calhoun, B. H., โ€œA 0.5V 560kHz 18.8fJ/Cycle Ultra-Low Energy Oscillator in 65nm CMOS with 96.1ppm/ยฐC Stability Using a Duty-Cycled Digital Frequency-Locked Loopโ€, in 2020 IEEE Symposium on VLSI Circuits (VLSI), 2020.PDF icon A 0.5V 560kHz 18.8fJ_Cycle Ultra-Low Energy Oscillator in 65nm CMOS with 96.1ppm_C Stability Using a Duty-Cycled Frequency-Locked Loop.pdf (2.67 MB)
D. S. Truesdell, Dissanayake, A., and Calhoun, B. H., โ€œA 0.6-V 44.6-fJ/Cycle Energy-Optimized Frequency-Locked Loop in 65-nm CMOS With 20.3-ppm/ยฐC Stabilityโ€, IEEE Solid-State Circuits Letters (SSCL), 2019.PDF icon A 0.6-V 44.6-fJ Cycle Energy-Optimized Frequency-Locked Loop in 65-nm CMOS With 20.3-ppm C Stability.pdf (1.64 MB)
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P. Wang, Agarwala, R., Bishop, H. L., Dissanayake, A., and Calhoun, B. H., โ€œA 785nW Multimodal (V/I/R) Sensor Interface IC for Ozone Pollutant Sensing and Correlated Cardiovascular Disease Monitoringโ€, in 2020 IEEE Symposium on VLSI Circuits (VLSI), 2020.
J. Wang, Singhee, A., Rutenbar, R. A., and Calhoun, B. H., โ€œStatistical Modeling for the Minimum Standby Supply Voltage of a Full SRAM Arrayโ€, in European Solid State Circuits Conference (ESSCIRC), 2007, pp. 400-403.
J. Wang and Calhoun, B. H., โ€œCanary Replica Feedback for Near-DRV Standby VDD Scaling in a 90nm SRAMโ€, in Custom Integrated Circuits Conference (CICC), 2007, pp. 29-32.
J. Wang and Calhoun, B. H., โ€œStandby Supply Voltage Minimization for Reliable Nanoscale SRAMsโ€, in Solid State Circuits Technologies, J. W. Swart, Ed. INTECH, 2010.
J. Wang and Calhoun, B. H., โ€œMinimum Supply Voltage and Yield Estimation for Large SRAMs Under Parametric Variationsโ€, Transactions on VLSI Systems (TVLSI), 2011.
L. Wang, Skadron, K., and Calhoun, B. H., โ€œDark vs. Dim Silicon and Near-Threshold Computingโ€, in Dark Silicon Workshop (DaSi), 2012.
J. Wang, Nalam, S., Qi, J., Mann, R. W., Stan, M., and Calhoun, B. H., โ€œImproving SRAM Vmin and Yield by Using Variation-Aware BTI Stressโ€, in CICC, San Jose, CA, 2010.
J. Wang, Hoefler, A., and Calhoun, B. H., โ€œAn Enhanced Canary-based System with BIST for SRAM Standby Power Reductionโ€, Transactions on VLSI Systems (TVLSI), 2011.
J. Wang, Nalam, S., and Calhoun, B. H., โ€œAnalyzing Static and Dynamic Write Margin for Nanometer SRAMsโ€, in International Symposium on Low Power Electronics and Design, 2008, pp. 129-134.

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