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Author Title [ Type(Desc)] Year
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Journal Article
B. H. Calhoun, Ryan, J., Khanna, S., Putic, M., and Lach, J., Flexible Circuits and Architectures for Ultra Low Power, Proceedings of the IEEE, vol. 98, pp. 267-282, 2010.
J. Moody, Dissanayake, A., Bishop, H. L., Lu, R., Liu, N. X., Duvvuri, D., Gao, A., Truesdell, D. S., N. Barker, S., Gong, S., Calhoun, B. H., and Bowers, S. M., A Highly Re-configurable Bit-level Duty Cycled TRF Receiver Achieving -106 dBm Sensitivity and 33 nW Average Power Consumption, IEEE Solid-State Circuits Letters (SSCL), Special Issue on VLSI (invited paper), 2019.
B. H. Calhoun, Honore, F. A., and Chandrakasan, A., A Leakage Reduction Methodology for Distributed MTCMOS, IEEE Journal of Solid-State Circuits (JSSC), vol. 39, pp. 818-826, 2004.
D. S. Truesdell, Ahmed, S. Z., Ghosh, A. W., and Calhoun, B. H., Minimum-Energy Digital Computing with Steep Subthreshold Swing Tunnel FETs, IEEE Journal of Exploratory Solid-State Computational Devices and Circuits (JxCDC), 2020.PDF icon Minimum-Energy Digital Computing With Steep Subthreshold Swing Tunnel FETs.pdf (1.02 MB)
B. H. Calhoun, Wang, A., and Chandrakasan, A., Modeling and Sizing for Minimum Energy Operation in Sub-threshold Circuits, IEEE Journal of Solid-State Circuits (JSSC), vol. 40, pp. 1778-1786, 2005.
S. Z. Ahmed, Tan, Y., Truesdell, D. S., Calhoun, B. H., and Ghosh, A., Modeling tunnel field effect transistors-from interface chemistry to non-idealities to circuit level performance, Journal of Applied Physics, 2018.
S. Li, Roy, A., and Calhoun, B. H., A Piezoelectric Energy-Harvesting System with Parallel-SSHI Rectifier and Integrated Maximum-Power-Point Tracking, IEEE Solid-State Circuits Letters (SSCL), Special Issue on VLSI (invited paper), 2019.
A. Klinefelter, Zhang, Y., Otis, B., and Calhoun, B. H., A Programmable 34 nW/Channel Sub-Threshold Signal Band Power Extractor on a Body Sensor Node SoC, Circuits and Systems II: Express Briefs, IEEE Transactions on, vol. 59, p. 941, 2012.
D. S. Truesdell and Calhoun, B. H., A Single-Supply 6-Transistor Voltage Level Converter Design Reaching 8.18-fJ/Transition at 0.3-1.2-V Range or 44-fW Leakage at 0.8-2.5-V Range, IEEE Solid-State Circuits Letters (SSCL), 2020.PDF icon A Single-Supply 6-Transistor Voltage Level Converter Design Reaching 8.18-fJ_Transition at 0.3-1.2-V Range or 44-fW Leakage at 0.8-2.5-V Range.pdf (1.06 MB)
B. H. Calhoun and Chandrakasan, A., Standby Power Reduction Using Dynamic Voltage Scaling and Flip-Flop Structures, IEEE Journal of Solid-State Circuits (JSSC), vol. 39, pp. 1504-1511, 2004.
B. H. Calhoun and Chandrakasan, A., Static Noise Margin Variation for Sub-threshold SRAM in 65nm CMOS, IEEE Journal of Solid-State Circuits (JSSC), vol. 41, pp. 1673-1679, 2006.
J. Wang and Calhoun, B. H., Techniques to Extend Canary-based Standby VDD Scaling for SRAMs to 45nm and Beyond, IEEE Journal of Solid-State Circuits, vol. 43, pp. 2514-2523, 2008.
F. B. Yahya, Lukas, C. J., and Calhoun, B. H., A Top-Down Approach to Building Battery-Less Self-Powered Systems for the Internet-of-Things, Journal of Low Power Electronics & Applications, 2018.
J. Wang, Singhee, A., Rutenbar, R. A., and Calhoun, B. H., Two Fast Methods for Estimating the Minimum Standby Supply Voltage for Large SRAMs, Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCAD), vol. 29, pp. 1908-1920, 2010.
B. H. Calhoun and Chandrakasan, A., Ultra-Dynamic Voltage Scaling (UDVS) Using Sub-threshold Operation and Local Voltage Dithering, IEEE Journal of Solid-State Circuits (JSSC), vol. 41, pp. 238-245, 2006.
A. Mallick, Bashar, M. K., Truesdell, D. S., Calhoun, B. H., Joshi, S., and Shukla, N., Using synchronized oscillators to compute the maximum independent set, Nature Communications, 2020.
J. Boley, Beshay, P., and Calhoun, B. H., Virtual Prototyper (ViPro): An SRAM Design Tool for Yield Constrained Optimization, Transactions of Very Large Scale Integration Systems, 2015.

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