B. H. Calhoun and Chandrakasan, A., “Static Noise Margin Variation for Sub-threshold SRAM in 65nm CMOS”, IEEE Journal of Solid-State Circuits (JSSC), vol. 41, pp. 1673-1679, 2006.Calhoun_JSSC06_snm.pdf Google ScholarBibTexRTFTaggedMARCXMLRIS