Robust Low Power VLSI
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2009
J. Qi, Wang, J., Calhoun, B. H., and Stan, M., “MSN: Memory Sensor for NBTI”, in Techcon, 2009.
B. H. Calhoun and Rabaey, J., “Optimizing Power @ Design Time – Memory”, in Low Power Design Essentials, J. Rabaey, Ed. 2009.
B. H. Calhoun and Rabaey, J., “Optimizing Power @ Standby – Memory”, in Low Power Design Essentials, J. Rabaey, Ed. 2009.
M. Putic, Di, L., Calhoun, B. H., and Lach, andJohn, “Panoptic DVS: A Fine-Grained Dynamic Voltage Scaling Framework for Energy Scalable CMOS Design”, in International Conference on Computer Design (ICCD), 2009, pp. 491-497.
S. Khanna and Calhoun, B. H., “Serial Sub-threshold Circuits for Ultra-Low-Power Systems”, in International Symposium on Low Power Electronics and Design, 2009.
B. H. Calhoun, Bolus, J., Khanna, S., Jurik, A. D., Weaver, A. F., and Blalock, T. N., “Sub-threshold Operation and Cross-Hierarchy Design for Ultra Low Power Wearable Sensors”, in International Symposium on Circuits and Systems, 2009.
2008
B. H. Calhoun, Cao, X. Li Yu, Mai, K., Pileggi, L. T., Rutenbar, R. A., and Shepard, K. L., “Digital Circuit Design Challenges and Opportunities in the Era of Nanoscale CMOS”, Proceedings of the IEEE (Special Issue on Integrated Electronics: Beyond Moore’s Law), vol. 96, pp. 343-365, 2008.
J. Wang and Calhoun, B. H., “An Enhanced Adaptive Canary System for SRAM Standby Power Reduction”, in TECHCON, 2008.
J. F. Ryan and Calhoun, B. H., “Minimizing Offset for Latching Voltage-Mode Sense Amplifiers for Sub-threshold Operation”, in International Symposium on Quality Electronic Design, 2008, pp. 127-132.
L. Di, Putic, M., Lach, J., and Calhoun, B. H., “Power Switch Characterization for Fine-Grained Dynamic Voltage Scaling”, in International Conference on Computer Design, pages 605-611, 2008.
A. Singhee, Wang, J., Calhoun, B. H., and Rutenbar, R. A., “Recursive Statistical Blockade: An Enhanced Technique for Rare Event Simulation with Application to SRAM Circuit Design”, in International Conference on VLSI Design, India, 2008, pp. 131-136.
J. Wang and Calhoun, B. H., “Techniques to Extend Canary-based Standby VDD Scaling for SRAMs to 45nm and Beyond”, IEEE Journal of Solid-State Circuits, vol. 43, pp. 2514-2523, 2008.
2007
B. H. Calhoun and Chandrakasan, A., “A 256kb 65nm Sub-threshold SRAM Design for Ultra-low Voltage Operation”, IEEE Journal of Solid-State Circuits (JSSC), vol. 42, pp. 680-688, 2007.
J. F. Ryan, Wang, J., and Calhoun, B. H., “Analyzing and Modeling Process Balance for Sub-threshold Circuit Design”, in GLSVLSI, 2007, pp. 275-280.
J. Wang and Calhoun, B. H., “Canary Replica Feedback for Near-DRV Standby VDD Scaling in a 90nm SRAM”, in Custom Integrated Circuits Conference (CICC), 2007, pp. 29-32.
J. Wang, Singhee, A., Rutenbar, R. A., and Calhoun, B. H., “Statistical Modeling for the Minimum Standby Supply Voltage of a Full SRAM Array”, in European Solid State Circuits Conference (ESSCIRC), 2007, pp. 400-403.
A. Wang, Calhoun, B. H., Verma, N., Kwong, J., and Chandrakasan, A., “Ultra-Dynamic Voltage Scaling for Energy Starved Electronics”, in Proc. of GOMAC Tech, 2007.
2006
B. H. Calhoun and Chandrakasan, A., “A 256kb Sub-threshold SRAM in 65nm CMOS”, presented at the 02/2006, IEEE International Solid-State Circuits Conference, 2006, pp. 628-629.
B. H. Calhoun, Schurgers, C., Wang, A., and Chandrakasan, A., “Low Energy Digital Circuit Design”, in AmIware: Hardware Drivers of Ambient Intelligence, and Ouwerkerk, M., Eds. Springer, 2006.
A. P. Chandrakasan, Verma, N., Kwong, J., Daly, D., Ickes, N., Finchelstein, D., and Calhoun, B. H., “Micropower Wireless Sensors”, in NSTI Nanotech, 2006, vol. 3, pp. 459-462.
B. H. Calhoun, ,, and Chandrakasan, A., “Power Gating and Dynamic Voltage Scaling”, in Leakage in Nanometer Technologies, S. Narendra and Chandrakasan, A., Eds. Springer, 2006, pp. 41-75.
B. H. Calhoun and Chandrakasan, A., “Static Noise Margin Variation for Sub-threshold SRAM in 65nm CMOS”, IEEE Journal of Solid-State Circuits (JSSC), vol. 41, pp. 1673-1679, 2006.
B. H. Calhoun, Wang, A., Verma, N., and Chandrakasan, A., “Sub-threshold Design: The Challenges of Minimizing Circuit Energy”, in International Symposium on Low Power Electronics and Design (ISLPED), 2006, pp. 366-368.
B. H. Calhoun and Chandrakasan, A., “Ultra-Dynamic Voltage Scaling (UDVS) Using Sub-threshold Operation and Local Voltage Dithering”, IEEE Journal of Solid-State Circuits (JSSC), vol. 41, pp. 238-245, 2006.
2005
B. H. Calhoun and Chandrakasan, A., “Analyzing Static Noise Margin for Sub-threshold SRAM in 65nm CMOS”, in European Solid-State Circuits Conference, 2005, pp. 363-366.

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