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A. Shrivastava, Wentzloff, D., and Calhoun, B. H., β€œA 10mV-Input Boost Converter with Inductor Peak Current Control and Zero Detection for Thermoelectric Energy Harvesting”, in IEEE Custom Integrated Circuits Conference (CICC), 2014.
A. Shrivastava, Roberts, N. E., Khan, O. U., Wentzloff, D. D., and Calhoun, B. H., β€œA 10mV-Input Boost Converter with Inductor Peak Current Control and Zero Detection for Thermoelectric and Solar Energy Harvesting with 220mV Cold-Start and -14.5dBm, 915MHz RF Kick-Start”, IEEE Journal of Solid-State Circuits (JSSC), vol. 50, pp. 1820-1832, 2015.
A. Shrivastava, Ramadass, Y. K., Khanna, S., Bartling, S., and Calhoun, B. H., β€œA 1.2ΞΌW SIMO Energy Harvesting and Power Management Unit with Constant Peak Inductor Current Control Achieving 83-92% Efficiency Across Wide Input and Output Voltages”, in Symposium on VLSI Circuits, 2014.
Y. Huang, Shrivastava, A., and Calhoun, B. H., β€œA 145mV to 1.2V Single Ended Level Converter Circuit for Ultra-Low Power Low Voltage ICs”, in IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015.
A. Shrivastava, Akella, D., and Calhoun, B. H., β€œA 1.5nW, 32.768kHz XTAL Oscillator Operational from 0.3V Supply”, IEEE Journal of Solid-State Circuits (JSSC), vol. 51, 2016.
A
J. F. Ryan, Khanna, S., and Calhoun, B. H., β€œAn Analytical Model for Performance Yield of Nanoscale SRAM Accounting for the Sense Amplifier Strobe Signal”, in Internation Symposium on Lower Power Electronics and Design (ISLPED), 2011.
J. Wang, Nalam, S., and Calhoun, B. H., β€œAnalyzing Static and Dynamic Write Margin for Nanometer SRAMs”, in International Symposium on Low Power Electronics and Design, 2008, pp. 129-134.
J. Boley, Wang, J., and Calhoun, B. H., β€œAnalyzing Sub-Threshold Bitcell Topologies and the Effects of Assist Methods on SRAM Vmin”, Journal of Low Power Electronics and Applications, 2012.
J. Boley, Calhoun, B. H., and Wang, J., β€œAnalyzing Subthreshold Bitcell Topologies and the Effects of Assist Methods on SRAM Vmin”. 2011.
J. Boley, Wang, J., and Calhoun, B. H., β€œAnalyzing Sub-Threshold Bitcell Topologies and the Effects of Assist Methods on SRAM VMIN”, Journal of Low Power Electronics and Applications (JLPEA), vol. 2, p. 12, 2012.
S. Nalam, Chandra, V., Pietrzyk, C., Aitken, R. C., and Calhoun, B. H., β€œAsymmetric 6T SRAM with Two-phase Write and Split Bitline Differential Sensing for Low Voltage Operation”, in ISQED, 2010, pp. 139-146.
S. Nalam and Calhoun, B. H., β€œAsymmetric Sizing in a 45nm 5T SRAM to Improve Read Stability over 6T”, in CICC, 2009, pp. 709-712.

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