Robust Low Power VLSI

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Conference Paper

J. Moody, Dissanayake, A., Bishop, H., Lu, R., Liu, N. X., Duvvuri, D., Gao, A., Truesdell, D. S., N. Barker, S., Gong, S., Calhoun, B. H., and Bowers, S. M., “A -106dBm 33nW Bit-Level Duty-Cycled Tuned RF Wake-up Receiver”, in 2019 Symposium on VLSI Circuits, Kyoto, Japan, 2019.

A. Dissanayake, Moody, J., Bishop, H. L., Truesdell, D. S., Muhlbauer, H., Lu, R., Gao, A., Gong, S., Calhoun, B. H., and Bowers, S. M., “A -108dBm Sensitivity, -28dB SIR, 130nW to 41μW, Digitally Reconfigurable Bit-Level Duty-Cycled Wakeup and Data Receiver”, in IEEE Custom Integrated Circuits Conference (CICC), 2020.

Journal Article

J. Moody, Dissanayake, A., Bishop, H. L., Lu, R., Liu, N. X., Duvvuri, D., Gao, A., Truesdell, D. S., N. Barker, S., Gong, S., Calhoun, B. H., and Bowers, S. M., “A Highly Re-configurable Bit-level Duty Cycled TRF Receiver Achieving -106 dBm Sensitivity and 33 nW Average Power Consumption”, IEEE Solid-State Circuits Letters (SSCL), Special Issue on VLSI (invited paper), 2019.

P. Bassirian, Moody, J., Lu, R., Gao, A., Manzaneque, T., Roy, A., N Barker, S., Calhoun, B. H., Gong, S., and Bowers, S. M., “Nanowatt-Level Wakeup Receiver Front Ends Using MEMS Resonators for Impedance Transformation”, IEEE Transactions on Microwave Theory and Techniques, 2019.