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Author Title [ Type(Desc)] Year
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Journal Article
S. Z. Ahmed, Truesdell, D. S., Tan, Y., Calhoun, B. H., and Ghosh, A. W., A comprehensive analysis of Auger generation impacted planar Tunnel FETs, Solid-State Electronics, 2020.
X. Chen, Alghaihab, A., Shi, Y., Truesdell, D. S., Calhoun, B. H., and Wentzloff, D. D., A Crystal-Less BLE Transmitter with Clock Recovery from GFSK-Modulated BLE Packets, IEEE Journal of Solid-State Circuits, 2021.
J. Moody, Dissanayake, A., Bishop, H. L., Lu, R., Liu, N. X., Duvvuri, D., Gao, A., Truesdell, D. S., N. Barker, S., Gong, S., Calhoun, B. H., and Bowers, S. M., A Highly Re-configurable Bit-level Duty Cycled TRF Receiver Achieving -106 dBm Sensitivity and 33 nW Average Power Consumption, IEEE Solid-State Circuits Letters (SSCL), Special Issue on VLSI (invited paper), 2019.
D. S. Truesdell, Ahmed, S. Z., Ghosh, A. W., and Calhoun, B. H., Minimum-Energy Digital Computing with Steep Subthreshold Swing Tunnel FETs, IEEE Journal of Exploratory Solid-State Computational Devices and Circuits (JxCDC), 2020.PDF icon Minimum-Energy Digital Computing With Steep Subthreshold Swing Tunnel FETs.pdf (1.02 MB)
S. Z. Ahmed, Tan, Y., Truesdell, D. S., Calhoun, B. H., and Ghosh, A., Modeling tunnel field effect transistors-from interface chemistry to non-idealities to circuit level performance, Journal of Applied Physics, 2018.
D. S. Truesdell and Calhoun, B. H., A Single-Supply 6-Transistor Voltage Level Converter Design Reaching 8.18-fJ/Transition at 0.3-1.2-V Range or 44-fW Leakage at 0.8-2.5-V Range, IEEE Solid-State Circuits Letters (SSCL), 2020.PDF icon A Single-Supply 6-Transistor Voltage Level Converter Design Reaching 8.18-fJ_Transition at 0.3-1.2-V Range or 44-fW Leakage at 0.8-2.5-V Range.pdf (1.06 MB)
A. Mallick, Bashar, M. K., Truesdell, D. S., Calhoun, B. H., Joshi, S., and Shukla, N., Using synchronized oscillators to compute the maximum independent set, Nature Communications, 2020.

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