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Conference Paper
N. Gilbert, Zhang, Y., Dinh, J., Calhoun, B., and Hollmer, S., A 0.6V 8 pJ/write Non-Volatile CBRAM Macro Embedded in a Body Sensor Node for Ultra Low Energy Applications, in Symposium on VLSI Circuits, 2013.
J. Moody, Dissanayake, A., Bishop, H., Lu, R., Liu, N. X., Duvvuri, D., Gao, A., Truesdell, D. S., N. Barker, S., Gong, S., Calhoun, B. H., and Bowers, S. M., A -106dBm 33nW Bit-Level Duty-Cycled Tuned RF Wake-up Receiver, in 2019 Symposium on VLSI Circuits, Kyoto, Japan, 2019.
J. Moody, Dissanayake, A., Bishop, H., Lu, R., Liu, N. X., Duvvuri, D., Gao, A., Truesdell, D. S., N. Barker, S., Gong, S., Calhoun, B. H., and Bowers, S. M., A -106dBm 33nW Bit-Level Duty-Cycled Tuned RF Wake-up Receiver, in 2019 Symposium on VLSI Circuits, Kyoto, Japan, 2019.
A. Dissanayake, Moody, J., Bishop, H. L., Truesdell, D. S., Muhlbauer, H., Lu, R., Gao, A., Gong, S., Calhoun, B. H., and Bowers, S. M., A -108dBm Sensitivity, -28dB SIR, 130nW to 41μW, Digitally Reconfigurable Bit-Level Duty-Cycled Wakeup and Data Receiver, in IEEE Custom Integrated Circuits Conference (CICC), 2020.
A. Dissanayake, Moody, J., Bishop, H. L., Truesdell, D. S., Muhlbauer, H., Lu, R., Gao, A., Gong, S., Calhoun, B. H., and Bowers, S. M., A -108dBm Sensitivity, -28dB SIR, 130nW to 41μW, Digitally Reconfigurable Bit-Level Duty-Cycled Wakeup and Data Receiver, in IEEE Custom Integrated Circuits Conference (CICC), 2020.
A. Roy, Grossmann, P., Vitale, S., and Calhoun, B., A 1.3μW, 5pJ/cycle sub-threshold MSP430 processor in 90nm xLP FDSOI for energy-efficient IoT applications, in International Symposium on Quality Electronic Design (ISQED), Santa Clara, CA, 2016.
A. Banerjee, Liu, N., Patel, H. N., and Calhoun, B. H., A 256kb 6T self-tuning SRAM with extended 0.38V–1.2V operating range using multiple read/write assists and VMIN tracking canary sensors, in 2017 IEEE Custom Integrated Circuits Conference (CICC), Austin, TX, 2017, 2017.
A. Klinefelter, Roberts, N., Shakhsheer, Y., Gonzalez, P., Shrivastava, A., Roy, A., Craig, K., Faisal, M., Boley, J., Oh, S., Zhang, Y., Akella, D., Wentzloff, D. D., and Calhoun, B., A 6.45 μW Self-Powered IoT SoC with Integrated Energy-Harvesting Power Management and ULP Asymmetric Radios, in ISSCC, San Francisco, CA, 2015.
S. Gupta, Truesdell, D. S., and Calhoun, B. H., A 65nm 16kb SRAM with 131.5pW Leakage at 0.9V for Wireless IoT Sensor Nodes, in 2020 IEEE Symposium on VLSI Circuits (VLSI), 2020.PDF icon A 65nm 16kb SRAM with 131.5pW Leakage at 0.9V for Wireless IoT Sensor Nodes.pdf (935.56 KB)
S. Z. Ahmed, Tan, Y., Truesdell, D. S., and Ghosh, A., Auger Effect Limited Performance in Tunnel Field Effect Transistors, in 5th Berkeley Symposium on Energy Efficient Electronics & Steep Transistors Workshop, Berkeley, CA, 2017.
M. Guevara, Marino, M. D., Meng, J., Satyamoorthy, P., Szafaryn, L. G., Wu, P., Meyer, B., Skadron, K., Lach, J., and Calhoun, B. H., Exploiting Dynamically Changing Parallelism with a Reconfigurable Array of Homogeneous Sub-cores, in TECHCON, 2010.
J. J. Granacki, Calhoun, B. H., Dasu, A. R., Jagasivamani, M., McIlrath, L., and Fritze, M., LEDRA: A 3DIC Ultra-Low Power FPGA Architecture for DoD Applications, in GOMAC Tech, 2014.
S. Kamineni, Gupta, S., and Calhoun, B. H., MemGen: An Open-Source Framework for Autonomous Generation of Memory Macros, in IEEE Custom Integrated Circuits Conference (CICC), 2021.PDF icon kamineni2021.pdf (9.26 MB)
D. S. Truesdell, Liu, X., Breiholz, J., Gupta, S., Li, S., and Calhoun, B. H., NanoWattch: A Self-Powered 3-nW RISC-V SoC Operable from 160mV Photovoltaic Input with Integrated Temperature Sensing and Adaptive Performance Scaling, in 2022 IEEE Symposium on VLSI Circuits (VLSI), (Equally-Credited Authors), 2022.PDF icon NanoWattch A Self-Powered 3-nW RISC-V SoC Operable from 160mV Photovoltaic Input with Integrated Temperature Sensing and Adaptive Performance Scaling.pdf (11.11 MB)
T. Ajayi, Kamineni, S., Cherivirala, Y. K., Fayazi, M., Kwon, K., Saligane, M., Gupta, S., Chen, C. - H., Sylvester, D., Blaauw, D., Dreslinski, Jr, R., Calhoun, B., and Wentzloff, D. D., An Open-source Framework for Autonomous SoC Design with Analog Block Generation, in 28th IFIP/IEEE International Conference on Very Large Scale Integration, Salt Lake City, UT, USA. (Nominated for Best Paper Award), 2020.
D. Akella Kamakshi, Guo, X., Patel, H. N., Stan, M. R., and Calhoun, B. H., A post-silicon hold time closure technique using data-path tunable-buffers for variation-tolerance in sub-threshold designs, in 19th International Symposium on Quality Electronic Design (ISQED), 2018.
B. H. Meyer, Skadron, K., George, N., Calhoun, B. H., and Lach, J., Reducing the Cost of Redundant Execution in Safety-Critical Systems using Relaxed Dedication, in Design Automation and Test in Europe (DATE), 2011.
A. Banerjee, Sinangil, M., Poulton, J., Gray, C. T., and Calhoun, B. H., A Reverse Write Assist Circuit for SRAM Dynamic Write VMIN Tracking using Canary SRAMs, in International Symposium on Quality Electronic Design (ISQED), 2014.
Journal Article
A. Roy, Klinefelter, A., Yahya, F., Chen, X., Gonzalez, P., Lukas, C. J., Akella, D., Boley, J., Craig, K., Faisal, M., Oh, S., Roberts, N., Shakhsheer, Y., Shrivastava, A., Vasudevan, D., Wentzloff, D. D., and Calhoun, B., A 6.45μW Self-Powered SoC with Integrated Energy-Harvesting Power Management and ULP Asymmetric Radios for Portable Biomedical Systems, IEEE Transactions on Biomedical Circuits and Systems, vol. 9, pp. 862-874, 2015.
S. Z. Ahmed, Truesdell, D. S., Tan, Y., Calhoun, B. H., and Ghosh, A. W., A comprehensive analysis of Auger generation impacted planar Tunnel FETs, Solid-State Electronics, 2020.
S. Gupta and Calhoun, B. H., Dynamic Read VMIN and Yield Estimation for Nanoscale SRAMs, IEEE Transactions on Circuits and Systems I: Regular Papers, 2021.PDF icon Dynamic Read VMIN and Yield Estimation of Nanoscale SRAMs.pdf (3.72 MB)
S. Gupta and Calhoun, B. H., Dynamic Write VMIN and Yield Estimation for Nanoscale SRAMs, IEEE Transactions on Circuits and Systems I: Regular Papers, 2021.PDF icon Dynamic Write VMIN and Yield Estimation for Nanoscale SRAMs.pdf (4.55 MB)
J. Moody, Dissanayake, A., Bishop, H. L., Lu, R., Liu, N. X., Duvvuri, D., Gao, A., Truesdell, D. S., N. Barker, S., Gong, S., Calhoun, B. H., and Bowers, S. M., A Highly Re-configurable Bit-level Duty Cycled TRF Receiver Achieving -106 dBm Sensitivity and 33 nW Average Power Consumption, IEEE Solid-State Circuits Letters (SSCL), Special Issue on VLSI (invited paper), 2019.
J. Moody, Dissanayake, A., Bishop, H. L., Lu, R., Liu, N. X., Duvvuri, D., Gao, A., Truesdell, D. S., N. Barker, S., Gong, S., Calhoun, B. H., and Bowers, S. M., A Highly Re-configurable Bit-level Duty Cycled TRF Receiver Achieving -106 dBm Sensitivity and 33 nW Average Power Consumption, IEEE Solid-State Circuits Letters (SSCL), Special Issue on VLSI (invited paper), 2019.

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