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S. Z. Ahmed, Tan, Y., Truesdell, D. S., and Ghosh, A., Auger Effect Limited Performance in Tunnel Field Effect Transistors, in 5th Berkeley Symposium on Energy Efficient Electronics & Steep Transistors Workshop, Berkeley, CA, 2017.
S. Z. Ahmed, Tan, Y., Truesdell, D. S., and Ghosh, A., Auger Effect Limited Performance in Tunnel Field Effect Transistors, in 5th Berkeley Symposium on Energy Efficient Electronics & Steep Transistors Workshop, Berkeley, CA, 2017.
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D. S. Truesdell, Breiholz, J., Kamineni, S., Liu, N. X., Magyar, A., and Calhoun, B. H., A 6–140-nW 11 Hz–8.2-kHz DVFS RISC-V Microprocessor Using Scalable Dynamic Leakage-Suppression Logic, IEEE Solid-State Circuits Letters (SSCL), 2019.PDF icon A 6–140-nW 11 Hz–8.2-kHz DVFS RISC-V Microprocessor Using Scalable Dynamic Leakage-Suppression Logic (1.63 MB)
X. Liu, Agrawal, A., Tanaka, A., and Calhoun, B. H., A 6nA Fully-Autonomous Triple-Input Hybrid-Inductor-Capacitor Multi-Output Power Management System with Multi-Rail Energy Sharing, All-Rail Cold Startup, and Adaptive Conversion Control for mm-scale Distributed Systems, in 2024 IEEE International Solid-State Circuits Conference (ISSCC), 2024.PDF icon A_6nA_Fully Autonomous_Triple-Input_Hybrid-Inductor-Capacitor_Multi-Output_Power_Management_System_with_Multi-Rail_Energy_Sharing_All-Rail_Cold_Startup_and_Adaptive_Conve.pdf (1.55 MB)
S. Gupta, Truesdell, D. S., and Calhoun, B. H., A 65nm 16kb SRAM with 131.5pW Leakage at 0.9V for Wireless IoT Sensor Nodes, in 2020 IEEE Symposium on VLSI Circuits (VLSI), 2020.PDF icon A 65nm 16kb SRAM with 131.5pW Leakage at 0.9V for Wireless IoT Sensor Nodes.pdf (935.56 KB)
D. S. Truesdell and Calhoun, B. H., A 640 pW 22 pJ/sample Gate Leakage-Based Digital CMOS Temperature Sensor with 0.25°C Resolution, in IEEE Custom Integrated Circuits Conference (CICC) 2019, Austin, TX, 2019.PDF icon A 640 pW 22 pJ_sample Gate Leakage-Based Digital CMOS Temperature Sensor with 0.25C Resolution.pdf (1.81 MB)

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