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Filters: First Letter Of Last Name is C and Author is B. H. Calhoun  [Clear All Filters]
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J. F. Ryan, Khanna, S., and Calhoun, B. H., An Analytical Model for Performance Yield of Nanoscale SRAM Accounting for the Sense Amplifier Strobe Signal, in Internation Symposium on Lower Power Electronics and Design (ISLPED), 2011.
J. Wang, Nalam, S., and Calhoun, B. H., Analyzing Static and Dynamic Write Margin for Nanometer SRAMs, in International Symposium on Low Power Electronics and Design, 2008, pp. 129-134.
J. Boley, Calhoun, B. H., and Wang, J., Analyzing Subthreshold Bitcell Topologies and the Effects of Assist Methods on SRAM Vmin. 2011.
J. Boley, Wang, J., and Calhoun, B. H., Analyzing Sub-Threshold Bitcell Topologies and the Effects of Assist Methods on SRAM VMIN, Journal of Low Power Electronics and Applications (JLPEA), vol. 2, p. 12, 2012.
J. Boley, Wang, J., and Calhoun, B. H., Analyzing Sub-Threshold Bitcell Topologies and the Effects of Assist Methods on SRAM Vmin, Journal of Low Power Electronics and Applications, 2012.
S. Nalam, Chandra, V., Pietrzyk, C., Aitken, R. C., and Calhoun, B. H., Asymmetric 6T SRAM with Two-phase Write and Split Bitline Differential Sensing for Low Voltage Operation, in ISQED, 2010, pp. 139-146.
S. Nalam and Calhoun, B. H., Asymmetric Sizing in a 45nm 5T SRAM to Improve Read Stability over 6T, in CICC, 2009, pp. 709-712.

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