VLSI Design Group

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Publications

2008
J. Wang, Nalam, S., and Calhoun, B. H., Analyzing Static and Dynamic Write Margin for Nanometer SRAMs, in International Symposium on Low Power Electronics and Design, 2008, pp. 129-134.
B. H. Calhoun, Cao, X. Li Yu, Mai, K., Pileggi, L. T., Rutenbar, R. A., and Shepard, K. L., Digital Circuit Design Challenges and Opportunities in the Era of Nanoscale CMOS, Proceedings of the IEEE (Special Issue on Integrated Electronics: Beyond Moore’s Law), vol. 96, pp. 343-365, 2008.
J. Wang and Calhoun, B. H., An Enhanced Adaptive Canary System for SRAM Standby Power Reduction, in TECHCON, 2008.
J. F. Ryan and Calhoun, B. H., Minimizing Offset for Latching Voltage-Mode Sense Amplifiers for Sub-threshold Operation, in International Symposium on Quality Electronic Design, 2008, pp. 127-132.
L. Di, Putic, M., Lach, J., and Calhoun, B. H., Power Switch Characterization for Fine-Grained Dynamic Voltage Scaling, in International Conference on Computer Design, pages 605-611, 2008.
A. Singhee, Wang, J., Calhoun, B. H., and Rutenbar, R. A., Recursive Statistical Blockade: An Enhanced Technique for Rare Event Simulation with Application to SRAM Circuit Design, in International Conference on VLSI Design, India, 2008, pp. 131-136.
J. Wang and Calhoun, B. H., Techniques to Extend Canary-based Standby VDD Scaling for SRAMs to 45nm and Beyond, IEEE Journal of Solid-State Circuits, vol. 43, pp. 2514-2523, 2008.
2006
B. H. Calhoun and Chandrakasan, A., A 256kb Sub-threshold SRAM in 65nm CMOS, presented at the 02/2006, IEEE International Solid-State Circuits Conference, 2006, pp. 628-629.
B. H. Calhoun, Schurgers, C., Wang, A., and Chandrakasan, A., Low Energy Digital Circuit Design, in AmIware: Hardware Drivers of Ambient Intelligence, and Ouwerkerk, M., Eds. Springer, 2006.
A. P. Chandrakasan, Verma, N., Kwong, J., Daly, D., Ickes, N., Finchelstein, D., and Calhoun, B. H., Micropower Wireless Sensors, in NSTI Nanotech, 2006, vol. 3, pp. 459-462.
B. H. Calhoun, ,, and Chandrakasan, A., Power Gating and Dynamic Voltage Scaling, in Leakage in Nanometer Technologies, S. Narendra and Chandrakasan, A., Eds. Springer, 2006, pp. 41-75.
B. H. Calhoun and Chandrakasan, A., Static Noise Margin Variation for Sub-threshold SRAM in 65nm CMOS, IEEE Journal of Solid-State Circuits (JSSC), vol. 41, pp. 1673-1679, 2006.
A. Wang and Calhoun, A. Chandrakas, Sub-threshold Design for Ultra Low-Power Systems. Springer, 2006.
B. H. Calhoun, Wang, A., Verma, N., and Chandrakasan, A., Sub-threshold Design: The Challenges of Minimizing Circuit Energy, in International Symposium on Low Power Electronics and Design (ISLPED), 2006, pp. 366-368.
B. H. Calhoun and Chandrakasan, A., Ultra-Dynamic Voltage Scaling (UDVS) Using Sub-threshold Operation and Local Voltage Dithering, IEEE Journal of Solid-State Circuits (JSSC), vol. 41, pp. 238-245, 2006.

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