Robust Low Power VLSI
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Journal Article
V. Misra, Bozkurt, A., Calhoun, B., Jackson, T., Jur, J., Lach, J., Lee, B., Muth, J., Oralkan, O., Ozturk, M., Trolier-McKinstry, S., Vashaee, D., Wentzloff, D., and Zhu, Y., “Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing”, Proceedings of the IEEE, vol. 103, pp. 665-681, 2015.
J. Moody, Dissanayake, A., Bishop, H. L., Lu, R., Liu, N. X., Duvvuri, D., Gao, A., Truesdell, D. S., N. Barker, S., Gong, S., Calhoun, B. H., and Bowers, S. M., “A Highly Re-configurable Bit-level Duty Cycled TRF Receiver Achieving -106 dBm Sensitivity and 33 nW Average Power Consumption”, IEEE Solid-State Circuits Letters (SSCL), Special Issue on VLSI (invited paper), 2019.
J. Moody, Dissanayake, A., Bishop, H. L., Lu, R., Liu, N. X., Duvvuri, D., Gao, A., Truesdell, D. S., N. Barker, S., Gong, S., Calhoun, B. H., and Bowers, S. M., “A Highly Re-configurable Bit-level Duty Cycled TRF Receiver Achieving -106 dBm Sensitivity and 33 nW Average Power Consumption”, IEEE Solid-State Circuits Letters (SSCL), Special Issue on VLSI (invited paper), 2019.
J. Moody, Dissanayake, A., Bishop, H. L., Lu, R., Liu, N. X., Duvvuri, D., Gao, A., Truesdell, D. S., N. Barker, S., Gong, S., Calhoun, B. H., and Bowers, S. M., “A Highly Re-configurable Bit-level Duty Cycled TRF Receiver Achieving -106 dBm Sensitivity and 33 nW Average Power Consumption”, IEEE Solid-State Circuits Letters (SSCL), Special Issue on VLSI (invited paper), 2019.
R. W. Mann, Wang, J., Nalam, S., Khanna, S., Braceras, G., Pilo, H., and Calhoun, B. H., “Impact of circuit assist methods on margin and performance in 6T SRAM”, Journal of Solid State Electronics, vol. 54, pp. 1398-1407, 2010.
J. Moody, Bassirian, P., Roy, A., Liu, N. X., N Barker, S., Calhoun, B. H., and Bowers, S. M., “Interference Robust Detector-First Near-Zero Power Wake-Up Receiver”, IEEE Journal of Solid-State Circuits, 2019.
J. Moody, Bassirian, P., Roy, A., Liu, N. X., N Barker, S., Calhoun, B. H., and Bowers, S. M., “Interference Robust Detector-First Near-Zero Power Wake-Up Receiver”, IEEE Journal of Solid-State Circuits, 2019.
J. Moody, Bassirian, P., Roy, A., Liu, N. X., N Barker, S., Calhoun, B. H., and Bowers, S. M., “Interference Robust Detector-First Near-Zero Power Wake-Up Receiver”, IEEE Journal of Solid-State Circuits, 2019.
P. Bassirian, Moody, J., Lu, R., Gao, A., Manzaneque, T., Roy, A., N Barker, S., Calhoun, B. H., Gong, S., and Bowers, S. M., “Nanowatt-Level Wakeup Receiver Front Ends Using MEMS Resonators for Impedance Transformation”, IEEE Transactions on Microwave Theory and Techniques, 2019.
P. Bassirian, Moody, J., Lu, R., Gao, A., Manzaneque, T., Roy, A., N Barker, S., Calhoun, B. H., Gong, S., and Bowers, S. M., “Nanowatt-Level Wakeup Receiver Front Ends Using MEMS Resonators for Impedance Transformation”, IEEE Transactions on Microwave Theory and Techniques, 2019.
P. Bassirian, Moody, J., Lu, R., Gao, A., Manzaneque, T., Roy, A., N Barker, S., Calhoun, B. H., Gong, S., and Bowers, S. M., “Nanowatt-Level Wakeup Receiver Front Ends Using MEMS Resonators for Impedance Transformation”, IEEE Transactions on Microwave Theory and Techniques, 2019.
F. Yahya, Patel, H., Boley, J., Banerjee, A., and Calhoun, B. H., “A Sub-threshold 8T SRAM Macro with 12.29nW/KB Standby Power and 6.24 pJ/access for Battery-Less IoT SoCs”, J. Low Power Electron. Appl. (JLPEA), vol. 6, 2016.
F. Yahya, Patel, H., Boley, J., Banerjee, A., and Calhoun, B. H., “A Sub-threshold 8T SRAM Macro with 12.29nW/KB Standby Power and 6.24 pJ/access for Battery-Less IoT SoCs”, J. Low Power Electron. Appl. (JLPEA), vol. 6, 2016.
X. Liu, Kamineni, S., Breiholz, J., Calhoun, B. H., and Li, S., “A Sub-µW Energy-Performance-Aware IoT SoC with a Triple-Mode Power Management Unit for System Performance Scaling, Fast DVFS, and Energy Minimization”, IEEE Journal of Solid-State Circuits, 2024.PDF icon A_Sub-_mu_W_Energy-Performance-Aware_IoT_SoC_With_a_Triple_Mode_Power_Management_Unit_for_System_Performance_Scaling_Fast_DVFS_and_Energy_Minimization.pdf (7.38 MB)
S. N. Wooters, Cabe, A. C., Qi, Z., Wang, J., Mann, R. W., Calhoun, B. H., Stan, M. R., and Blalock, T. N., “Tracking On-Chip Age Using Distributed, Embedded Sensors”, Transactions on VLSI Systems (TVLSI), vol. 20, p. 12, 2012.
S. N. Wooters, Cabe, A. C., Qi, Z., Wang, J., Mann, R. W., Calhoun, B. H., Stan, M. R., and Blalock, T. N., “Tracking On-Chip Age Using Distributed, Embedded Sensors”, Transactions on VLSI Systems (TVLSI), 2011.
A. Banerjee and Calhoun, B. H., “An Ultra-Low Energy Subthreshold SRAM Bitcell for Energy Constrained Biomedical Applications”, Journal of Low Power Electronics and Applications (JLPEA), vol. 4, p. 19, 2014.
A. Mallick, Bashar, M. K., Truesdell, D. S., Calhoun, B. H., Joshi, S., and Shukla, N., “Using synchronized oscillators to compute the maximum independent set”, Nature Communications, 2020.
J. Boley, Beshay, P., and Calhoun, B. H., “Virtual Prototyper (ViPro): An SRAM Design Tool for Yield Constrained Optimization”, Transactions of Very Large Scale Integration Systems, 2015.
J. Boley, Beshay, P., and Calhoun, B. H., “Virtual Prototyper (ViPro): An SRAM Design Tool for Yield Constrained Optimization”, Transactions of Very Large Scale Integration Systems, 2015.
Miscellaneous
J. Boley, Calhoun, B. H., and Wang, J., “Analyzing Subthreshold Bitcell Topologies and the Effects of Assist Methods on SRAM Vmin”. 2011.

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