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Conference Paper
D. S. Truesdell, Li, S., and Calhoun, B. H., A 0.5V 560kHz 18.8fJ/Cycle Ultra-Low Energy Oscillator in 65nm CMOS with 96.1ppm/°C Stability Using a Duty-Cycled Digital Frequency-Locked Loop, in 2020 IEEE Symposium on VLSI Circuits (VLSI), 2020.PDF icon A 0.5V 560kHz 18.8fJ_Cycle Ultra-Low Energy Oscillator in 65nm CMOS with 96.1ppm_C Stability Using a Duty-Cycled Frequency-Locked Loop.pdf (2.67 MB)
J. Moody, Dissanayake, A., Bishop, H., Lu, R., Liu, N. X., Duvvuri, D., Gao, A., Truesdell, D. S., N. Barker, S., Gong, S., Calhoun, B. H., and Bowers, S. M., A -106dBm 33nW Bit-Level Duty-Cycled Tuned RF Wake-up Receiver, in 2019 Symposium on VLSI Circuits, Kyoto, Japan, 2019.
A. Dissanayake, Moody, J., Bishop, H. L., Truesdell, D. S., Muhlbauer, H., Lu, R., Gao, A., Gong, S., Calhoun, B. H., and Bowers, S. M., A -108dBm Sensitivity, -28dB SIR, 130nW to 41μW, Digitally Reconfigurable Bit-Level Duty-Cycled Wakeup and Data Receiver, in IEEE Custom Integrated Circuits Conference (CICC), 2020.
N. X. Liu, Agarwala, R., Dissanayake, A., Truesdell, D. S., Kamineni, S., Chen, X., Wentzloff, D. D., and Calhoun, B. H., A 2.5 ppm/°C 1.05 MHz Relaxation Oscillator with Dynamic Frequency-Error Compensation and 8 µs Start-Up Time, in IEEE European Solid-State Circuits Conference (ESSCIRC), Dresden, Germany, 2018.
D. S. Truesdell and Calhoun, B. H., A 640 pW 22 pJ/sample Gate Leakage-Based Digital CMOS Temperature Sensor with 0.25°C Resolution, in IEEE Custom Integrated Circuits Conference (CICC) 2019, Austin, TX, 2019.PDF icon A 640 pW 22 pJ_sample Gate Leakage-Based Digital CMOS Temperature Sensor with 0.25C Resolution.pdf (1.81 MB)
S. Gupta, Truesdell, D. S., and Calhoun, B. H., A 65nm 16kb SRAM with 131.5pW Leakage at 0.9V for Wireless IoT Sensor Nodes, in 2020 IEEE Symposium on VLSI Circuits (VLSI), 2020.PDF icon A 65nm 16kb SRAM with 131.5pW Leakage at 0.9V for Wireless IoT Sensor Nodes.pdf (935.56 KB)
S. Z. Ahmed, Tan, Y., Truesdell, D. S., and Ghosh, A., Auger Effect Limited Performance in Tunnel Field Effect Transistors, in 5th Berkeley Symposium on Energy Efficient Electronics & Steep Transistors Workshop, Berkeley, CA, 2017.
D. S. Truesdell and Calhoun, B. H., Channel Length Sizing for Power Minimization in Leakage-Dominated Digital Circuits, in IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2018.
A. Alghaihab, Chen, X., Shi, Y., Truesdell, D. S., Calhoun, B. H., and Wentzloff, D. D., A Crystal-Less BLE Transmitter with -86dBm Frequency-Hopping Back-Channel WRX and Over-the-Air Clock Recovery from a GFSK-Modulated BLE Packet, in 2020 IEEE International Solid-State Circuits Conference (ISSCC), 2020.
A. Mallick, Bashar, M. Khairul, Truesdell, D. S., Calhoun, B. H., Joshi, S., and Shukla, N., Graph Coloring using Coupled Oscillator-based Dynamical Systems, in 2021 IEEE International Symposium on Circuits and Systems (ISCAS), 2021.
D. S. Truesdell and Calhoun, B. H., Improving Dynamic Leakage Suppression Logic with Forward Body Bias in 65nm CMOS, in IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2019.
D. S. Truesdell, Liu, X., Breiholz, J., Gupta, S., Li, S., and Calhoun, B. H., NanoWattch: A Self-Powered 3-nW RISC-V SoC Operable from 160mV Photovoltaic Input with Integrated Temperature Sensing and Adaptive Performance Scaling, in 2022 IEEE Symposium on VLSI Circuits (VLSI), (Equally-Credited Authors), 2022.PDF icon NanoWattch A Self-Powered 3-nW RISC-V SoC Operable from 160mV Photovoltaic Input with Integrated Temperature Sensing and Adaptive Performance Scaling.pdf (11.11 MB)
X. Liu, Truesdell, D. S., Faruqe, O., Parameswaran, L., Rickley, M., Kopanski, A., Cantley, L., Coon, A., Bernasconi, M., Wang, T., and Calhoun, B. H., A Self-Powered SoC with Distributed Cooperative Energy Harvesting and Multi-Chip Power Management for System-in-Fiber, in 2023 IEEE International Solid-State Circuits Conference (ISSCC), In Press.
P. Bassirian, Duvvuri, D., Truesdell, D. S., Liu, N. X., Calhoun, B. H., and Bowers, S. M., A Temperature-robust 27.6nW -65dBm Wakeup Receiver at 9.6GHz X Band, in 2020 IEEE International Solid-State Circuits Conference (ISSCC), 2020.
Journal Article
D. S. Truesdell, Li, S., and Calhoun, B. H., A 0.5V 560-kHz 18.8-fJ/Cycle On-Chip Oscillator with 96.1-ppm/°C Steady-State Stability Using a Duty-Cycled Digital Frequency-Locked Loop, IEEE Journal of Solid-State Circuits, 2021.PDF icon A 0.5-V 560-kHz 18.8-fJ_Cycle On-Chip Oscillator With 96.1ppm_C Steady-State Stability Using a Duty-Cycled Digital Frequency-Locked Loop.pdf (2.95 MB)
D. S. Truesdell, Dissanayake, A., and Calhoun, B. H., A 0.6-V 44.6-fJ/Cycle Energy-Optimized Frequency-Locked Loop in 65-nm CMOS With 20.3-ppm/°C Stability, IEEE Solid-State Circuits Letters (SSCL), 2019.PDF icon A 0.6-V 44.6-fJ Cycle Energy-Optimized Frequency-Locked Loop in 65-nm CMOS With 20.3-ppm C Stability.pdf (1.64 MB)
N. X. Liu, Agarwala, R., Dissanayake, A., Truesdell, D. S., Kamineni, S., and Calhoun, B. H., A 2.5 ppm/°C 1.05 MHz Relaxation Oscillator with Dynamic Frequency-Error Compensation and Fast Start-Up Time, IEEE Journal of Solid-State Circuits (JSSC), 2019.
D. S. Truesdell, Breiholz, J., Kamineni, S., Liu, N. X., Magyar, A., and Calhoun, B. H., A 6–140-nW 11 Hz–8.2-kHz DVFS RISC-V Microprocessor Using Scalable Dynamic Leakage-Suppression Logic, IEEE Solid-State Circuits Letters (SSCL), 2019.PDF icon A 6–140-nW 11 Hz–8.2-kHz DVFS RISC-V Microprocessor Using Scalable Dynamic Leakage-Suppression Logic (1.63 MB)
S. Z. Ahmed, Truesdell, D. S., Tan, Y., Calhoun, B. H., and Ghosh, A. W., A comprehensive analysis of Auger generation impacted planar Tunnel FETs, Solid-State Electronics, 2020.
X. Chen, Alghaihab, A., Shi, Y., Truesdell, D. S., Calhoun, B. H., and Wentzloff, D. D., A Crystal-Less BLE Transmitter with Clock Recovery from GFSK-Modulated BLE Packets, IEEE Journal of Solid-State Circuits, 2021.
J. Moody, Dissanayake, A., Bishop, H. L., Lu, R., Liu, N. X., Duvvuri, D., Gao, A., Truesdell, D. S., N. Barker, S., Gong, S., Calhoun, B. H., and Bowers, S. M., A Highly Re-configurable Bit-level Duty Cycled TRF Receiver Achieving -106 dBm Sensitivity and 33 nW Average Power Consumption, IEEE Solid-State Circuits Letters (SSCL), Special Issue on VLSI (invited paper), 2019.
D. S. Truesdell, Ahmed, S. Z., Ghosh, A. W., and Calhoun, B. H., Minimum-Energy Digital Computing with Steep Subthreshold Swing Tunnel FETs, IEEE Journal of Exploratory Solid-State Computational Devices and Circuits (JxCDC), 2020.PDF icon Minimum-Energy Digital Computing With Steep Subthreshold Swing Tunnel FETs.pdf (1.02 MB)
S. Z. Ahmed, Tan, Y., Truesdell, D. S., Calhoun, B. H., and Ghosh, A., Modeling tunnel field effect transistors-from interface chemistry to non-idealities to circuit level performance, Journal of Applied Physics, 2018.
D. S. Truesdell and Calhoun, B. H., A Single-Supply 6-Transistor Voltage Level Converter Design Reaching 8.18-fJ/Transition at 0.3-1.2-V Range or 44-fW Leakage at 0.8-2.5-V Range, IEEE Solid-State Circuits Letters (SSCL), 2020.PDF icon A Single-Supply 6-Transistor Voltage Level Converter Design Reaching 8.18-fJ_Transition at 0.3-1.2-V Range or 44-fW Leakage at 0.8-2.5-V Range.pdf (1.06 MB)
A. Mallick, Bashar, M. K., Truesdell, D. S., Calhoun, B. H., Joshi, S., and Shukla, N., Using synchronized oscillators to compute the maximum independent set, Nature Communications, 2020.