Robust Low Power VLSI
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B. H. Calhoun, Daly, D. D., Verma, N., Finchelstein, D., Wentzloff, D. D., Wang, A., Cho, S. - H., and Chandrakasan, A., “Design Considerations for Ultra-low Energy Wireless Microsensor Nodes”, IEEE Transactions on Computers, vol. 54, pp. 727-740, 2005.
B. H. Calhoun and Lach, J., “What is a Body Sensor Network?”, ACM / SIGDA Newsletter, vol. 41, 2011.
B. H. Calhoun, Khanna, S., Mann, R., and Wang, J., “Sub-threshold Circuit Design with Shrinking CMOS Devices”, in International Symposium on Circuits and Systems, 2009.
B. H. Calhoun and Chandrakasan, A., “Ultra-Dynamic Voltage Scaling (UDVS) Using Sub-threshold Operation and Local Voltage Dithering”, IEEE Journal of Solid-State Circuits (JSSC), vol. 41, pp. 238-245, 2006.
B. H. Calhoun and Wentzloff, D. D., “Ultra-Low Power Wireless SoCs Enabling a Batteryless IoT”, in HOT Chips, 2015.
B. H. Calhoun and Chandrakasan, A., “Characterizing and Modeling Minimum Energy Operation for Subthreshold Circuits”, in International Symposium on Low Power Electronics and Design, 2004, pp. 90-95.
B. H. Calhoun and Brooks, D., “Can Subthreshold and Near-Threshold Circuits Go Mainstream?”, IEEE Micro, vol. 30, pp. 80-85, 2010.
B. H. Calhoun and Chandrakasan, A., “A 256kb 65nm Sub-threshold SRAM Design for Ultra-low Voltage Operation”, IEEE Journal of Solid-State Circuits (JSSC), vol. 42, pp. 680-688, 2007.
B. H. Calhoun, Wang, A., and Chandrakasan, A., “Modeling and Sizing for Minimum Energy Operation in Sub-threshold Circuits”, IEEE Journal of Solid-State Circuits (JSSC), vol. 40, pp. 1778-1786, 2005.
B. H. Calhoun, Bolus, J., Khanna, S., Jurik, A. D., Weaver, A. F., and Blalock, T. N., “Sub-threshold Operation and Cross-Hierarchy Design for Ultra Low Power Wearable Sensors”, in International Symposium on Circuits and Systems, 2009.
B. H. Calhoun and Chandrakasan, A., “A 256kb Sub-threshold SRAM in 65nm CMOS”, presented at the 02/2006, IEEE International Solid-State Circuits Conference, 2006, pp. 628-629.
B. H. Calhoun and Chandrakasan, A., “Standby Power Reduction Using Dynamic Voltage Scaling and Flip-Flop Structures”, IEEE Journal of Solid-State Circuits (JSSC), vol. 39, pp. 1504-1511, 2004.
B. H. Calhoun, Cao, X. Li Yu, Mai, K., Pileggi, L. T., Rutenbar, R. A., and Shepard, K. L., “Digital Circuit Design Challenges and Opportunities in the Era of Nanoscale CMOS”, Proceedings of the IEEE (Special Issue on Integrated Electronics: Beyond Moore’s Law), vol. 96, pp. 343-365, 2008.
B. H. Calhoun and Chandrakasan, A., “Analyzing Static Noise Margin for Sub-threshold SRAM in 65nm CMOS”, in European Solid-State Circuits Conference, 2005, pp. 363-366.
B. H. Calhoun, Honore, F. A., and Chandrakasan, A., “Design Methodology for Fine-Grained Leakage Control in MTCMOS”, in International Symposium on Low Power Electronics and Design (ISLPED), 2003, pp. 104-109.

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