Publications
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Author Title [ Type] Year Filters: First Letter Of Last Name is C [Clear All Filters]
“Distributed Energy Harvesting and Power Management Units for Self-Powered In-Fabric Sensing Networks”, 2024 IEEE Midwest Symposium on Circuits and Systems (MWSCAS), invited paper, 2024.
, “Dynamic Read VMIN and Yield Estimation for Nanoscale SRAMs”, IEEE Transactions on Circuits and Systems I: Regular Papers, 2021. Dynamic Read VMIN and Yield Estimation of Nanoscale SRAMs.pdf (3.72 MB)
, “Dynamic Write VMIN and Yield Estimation for Nanoscale SRAMs”, IEEE Transactions on Circuits and Systems I: Regular Papers, 2021. Dynamic Write VMIN and Yield Estimation for Nanoscale SRAMs.pdf (4.55 MB)
, “Effect of Angle on Flow-Induced Vibrations of Pinniped Vibrissae”, PLOS One, vol. Vol. 8, No. 7, 2013.
, “Energy Efficient Design for Body Sensor Nodes”, Journal of Low Power Electronics and Applications, 2011.
, “An Energy-Efficient Subthreshold Level Converter in 130-nm CMOS”, IEEE Transactions on Circuits and Systems II, vol. 57, pp. 290-294, 2010.
, “An Enhanced Canary-based System with BIST for SRAM Standby Power Reduction”, Transactions on VLSI Systems (TVLSI), 2011.
, “Enhanced Interference Rejection Bluetooth Low-Energy Back-Channel Receiver With LO Frequency Hopping”, IEEE Journal of Solid-State Circuits, 2019.
, “Flexible Circuits and Architectures for Ultra Low Power”, Proceedings of the IEEE, vol. 98, pp. 267-282, 2010.
, “Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing”, Proceedings of the IEEE, vol. 103, pp. 665-681, 2015.
, “A Highly Re-configurable Bit-level Duty Cycled TRF Receiver Achieving -106 dBm Sensitivity and 33 nW Average Power Consumption”, IEEE Solid-State Circuits Letters (SSCL), Special Issue on VLSI (invited paper), 2019.
, “Impact of circuit assist methods on margin and performance in 6T SRAM”, Journal of Solid State Electronics, vol. 54, pp. 1398-1407, 2010.
, “Interference Robust Detector-First Near-Zero Power Wake-Up Receiver”, IEEE Journal of Solid-State Circuits, 2019.
, “A Leakage Reduction Methodology for Distributed MTCMOS”, IEEE Journal of Solid-State Circuits (JSSC), vol. 39, pp. 818-826, 2004.
, “A Leakage Reduction Methodology for Distributed MTCMOS”, IEEE Journal of Solid-State Circuits (JSSC), vol. 39, pp. 818-826, 2004.
, “Minimum Supply Voltage and Yield Estimation for Large SRAMs Under Parametric Variations”, Transactions on VLSI Systems (TVLSI), 2011.
, “Minimum-Energy Digital Computing with Steep Subthreshold Swing Tunnel FETs”, IEEE Journal of Exploratory Solid-State Computational Devices and Circuits (JxCDC), 2020. Minimum-Energy Digital Computing With Steep Subthreshold Swing Tunnel FETs.pdf (1.02 MB)
, “Modeling and Sizing for Minimum Energy Operation in Sub-threshold Circuits”, IEEE Journal of Solid-State Circuits (JSSC), vol. 40, pp. 1778-1786, 2005.
, “Modeling and Sizing for Minimum Energy Operation in Sub-threshold Circuits”, IEEE Journal of Solid-State Circuits (JSSC), vol. 40, pp. 1778-1786, 2005.
, “Modeling tunnel field effect transistors-from interface chemistry to non-idealities to circuit level performance”, Journal of Applied Physics, 2018.
, “Nanowatt-Level Wakeup Receiver Front Ends Using MEMS Resonators for Impedance Transformation”, IEEE Transactions on Microwave Theory and Techniques, 2019.
, “Non-Random Device Mismatch Considerations in Nanoscale SRAM”, IEEE Transactions of VLSI Systems (TVLSI), 2011.
, “A Piezoelectric Energy-Harvesting System with Parallel-SSHI Rectifier and Integrated Maximum-Power-Point Tracking”, IEEE Solid-State Circuits Letters (SSCL), Special Issue on VLSI (invited paper), 2019.
, “A Programmable 34 nW/Channel Sub-Threshold Signal Band Power Extractor on a Body Sensor Node SoC”, Circuits and Systems II: Express Briefs, IEEE Transactions on, vol. 59, p. 941, 2012.
, “A Single-Supply 6-Transistor Voltage Level Converter Design Reaching 8.18-fJ/Transition at 0.3-1.2-V Range or 44-fW Leakage at 0.8-2.5-V Range”, IEEE Solid-State Circuits Letters (SSCL), 2020. A Single-Supply 6-Transistor Voltage Level Converter Design Reaching 8.18-fJ_Transition at 0.3-1.2-V Range or 44-fW Leakage at 0.8-2.5-V Range.pdf (1.06 MB)
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