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Journal Article
D. S. Truesdell and Calhoun, B. H., A Single-Supply 6-Transistor Voltage Level Converter Design Reaching 8.18-fJ/Transition at 0.3-1.2-V Range or 44-fW Leakage at 0.8-2.5-V Range, IEEE Solid-State Circuits Letters (SSCL), 2020.PDF icon A Single-Supply 6-Transistor Voltage Level Converter Design Reaching 8.18-fJ_Transition at 0.3-1.2-V Range or 44-fW Leakage at 0.8-2.5-V Range.pdf (1.06 MB)
A. Klinefelter, Zhang, Y., Otis, B., and Calhoun, B. H., A Programmable 34 nW/Channel Sub-Threshold Signal Band Power Extractor on a Body Sensor Node SoC, Circuits and Systems II: Express Briefs, IEEE Transactions on, vol. 59, p. 941, 2012.
S. Li, Roy, A., and Calhoun, B. H., A Piezoelectric Energy-Harvesting System with Parallel-SSHI Rectifier and Integrated Maximum-Power-Point Tracking, IEEE Solid-State Circuits Letters (SSCL), Special Issue on VLSI (invited paper), 2019.
R. W. Mann, Hook, T. B., Nguyen, P., and Calhoun, B. H., Non-Random Device Mismatch Considerations in Nanoscale SRAM, IEEE Transactions of VLSI Systems (TVLSI), 2011.
P. Bassirian, Moody, J., Lu, R., Gao, A., Manzaneque, T., Roy, A., N Barker, S., Calhoun, B. H., Gong, S., and Bowers, S. M., Nanowatt-Level Wakeup Receiver Front Ends Using MEMS Resonators for Impedance Transformation, IEEE Transactions on Microwave Theory and Techniques, 2019.
S. Z. Ahmed, Tan, Y., Truesdell, D. S., Calhoun, B. H., and Ghosh, A., Modeling tunnel field effect transistors-from interface chemistry to non-idealities to circuit level performance, Journal of Applied Physics, 2018.
B. H. Calhoun, Wang, A., and Chandrakasan, A., Modeling and Sizing for Minimum Energy Operation in Sub-threshold Circuits, IEEE Journal of Solid-State Circuits (JSSC), vol. 40, pp. 1778-1786, 2005.
B. H. Calhoun, Wang, A., and Chandrakasan, A., Modeling and Sizing for Minimum Energy Operation in Sub-threshold Circuits, IEEE Journal of Solid-State Circuits (JSSC), vol. 40, pp. 1778-1786, 2005.
D. S. Truesdell, Ahmed, S. Z., Ghosh, A. W., and Calhoun, B. H., Minimum-Energy Digital Computing with Steep Subthreshold Swing Tunnel FETs, IEEE Journal of Exploratory Solid-State Computational Devices and Circuits (JxCDC), 2020.PDF icon Minimum-Energy Digital Computing With Steep Subthreshold Swing Tunnel FETs.pdf (1.02 MB)
J. Wang and Calhoun, B. H., Minimum Supply Voltage and Yield Estimation for Large SRAMs Under Parametric Variations, Transactions on VLSI Systems (TVLSI), 2011.
B. H. Calhoun, Honore, F. A., and Chandrakasan, A., A Leakage Reduction Methodology for Distributed MTCMOS, IEEE Journal of Solid-State Circuits (JSSC), vol. 39, pp. 818-826, 2004.
B. H. Calhoun, Honore, F. A., and Chandrakasan, A., A Leakage Reduction Methodology for Distributed MTCMOS, IEEE Journal of Solid-State Circuits (JSSC), vol. 39, pp. 818-826, 2004.
J. Moody, Bassirian, P., Roy, A., Liu, N. X., N Barker, S., Calhoun, B. H., and Bowers, S. M., Interference Robust Detector-First Near-Zero Power Wake-Up Receiver, IEEE Journal of Solid-State Circuits, 2019.
R. W. Mann, Wang, J., Nalam, S., Khanna, S., Braceras, G., Pilo, H., and Calhoun, B. H., Impact of circuit assist methods on margin and performance in 6T SRAM, Journal of Solid State Electronics, vol. 54, pp. 1398-1407, 2010.
J. Moody, Dissanayake, A., Bishop, H. L., Lu, R., Liu, N. X., Duvvuri, D., Gao, A., Truesdell, D. S., N. Barker, S., Gong, S., Calhoun, B. H., and Bowers, S. M., A Highly Re-configurable Bit-level Duty Cycled TRF Receiver Achieving -106 dBm Sensitivity and 33 nW Average Power Consumption, IEEE Solid-State Circuits Letters (SSCL), Special Issue on VLSI (invited paper), 2019.
V. Misra, Bozkurt, A., Calhoun, B., Jackson, T., Jur, J., Lach, J., Lee, B., Muth, J., Oralkan, O., Ozturk, M., Trolier-McKinstry, S., Vashaee, D., Wentzloff, D., and Zhu, Y., Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing, Proceedings of the IEEE, vol. 103, pp. 665-681, 2015.
B. H. Calhoun, Ryan, J., Khanna, S., Putic, M., and Lach, J., Flexible Circuits and Architectures for Ultra Low Power, Proceedings of the IEEE, vol. 98, pp. 267-282, 2010.
A. Alghaihab, Shi, Y., Breiholz, J., Kim, H. - S., Calhoun, B. H., and Wentzloff, D. D., Enhanced Interference Rejection Bluetooth Low-Energy Back-Channel Receiver With LO Frequency Hopping, IEEE Journal of Solid-State Circuits, 2019.
J. Wang, Hoefler, A., and Calhoun, B. H., An Enhanced Canary-based System with BIST for SRAM Standby Power Reduction, Transactions on VLSI Systems (TVLSI), 2011.
S. N. Wooters, Calhoun, B. H., and Blalock, T. N., An Energy-Efficient Subthreshold Level Converter in 130-nm CMOS, IEEE Transactions on Circuits and Systems II, vol. 57, pp. 290-294, 2010.
Y. Zhang, Shakhsheer, Y., Barth, A. T., Powell, Jr., H. C., Ridenour, S. A., Hanson, M. A., Lach, J., and Calhoun, B. H., Energy Efficient Design for Body Sensor Nodes, Journal of Low Power Electronics and Applications, 2011.
C. T. Murphy, Eberhardt, W. C., Calhoun, B. H., Mann, K. A., and Mann, D. A., Effect of Angle on Flow-Induced Vibrations of Pinniped Vibrissae, PLOS One, vol. Vol. 8, No. 7, 2013.
S. Gupta and Calhoun, B. H., Dynamic Write VMIN and Yield Estimation for Nanoscale SRAMs, IEEE Transactions on Circuits and Systems I: Regular Papers, 2021.PDF icon Dynamic Write VMIN and Yield Estimation for Nanoscale SRAMs.pdf (4.55 MB)
S. Gupta and Calhoun, B. H., Dynamic Read VMIN and Yield Estimation for Nanoscale SRAMs, IEEE Transactions on Circuits and Systems I: Regular Papers, 2021.PDF icon Dynamic Read VMIN and Yield Estimation of Nanoscale SRAMs.pdf (3.72 MB)
B. H. Calhoun, Cao, X. Li Yu, Mai, K., Pileggi, L. T., Rutenbar, R. A., and Shepard, K. L., Digital Circuit Design Challenges and Opportunities in the Era of Nanoscale CMOS, Proceedings of the IEEE (Special Issue on Integrated Electronics: Beyond Moore’s Law), vol. 96, pp. 343-365, 2008.

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