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Author Title Type [ Year(Desc)]
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2008
J. Wang, Nalam, S., and Calhoun, B. H., Analyzing Static and Dynamic Write Margin for Nanometer SRAMs, in International Symposium on Low Power Electronics and Design, 2008, pp. 129-134.
2017
S. Z. Ahmed, Tan, Y., Truesdell, D. S., and Ghosh, A., Auger Effect Limited Performance in Tunnel Field Effect Transistors, in 5th Berkeley Symposium on Energy Efficient Electronics & Steep Transistors Workshop, Berkeley, CA, 2017.