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X. Chen, Breiholz, J., Yahya, F. B., Lukas, C. J., Kim, H. - S., Calhoun, B. H., and Wentzloff, D. D., “Analysis and Design of an Ultra-Low-Power Bluetooth Low-Energy Transmitter With Ring Oscillator-Based ADPLL and 4 Frequency Edge Combiner”, IEEE Journal of Solid-State Circuits, 2019.
J. F. Ryan, Khanna, S., and Calhoun, B. H., “An Analytical Model for Performance Yield of Nanoscale SRAM Accounting for the Sense Amplifier Strobe Signal”, in Internation Symposium on Lower Power Electronics and Design (ISLPED), 2011.
J. F. Ryan, Wang, J., and Calhoun, B. H., “Analyzing and Modeling Process Balance for Sub-threshold Circuit Design”, in GLSVLSI, 2007, pp. 275-280.
J. Wang, Nalam, S., and Calhoun, B. H., “Analyzing Static and Dynamic Write Margin for Nanometer SRAMs”, in International Symposium on Low Power Electronics and Design, 2008, pp. 129-134.
B. H. Calhoun and Chandrakasan, A., “Analyzing Static Noise Margin for Sub-threshold SRAM in 65nm CMOS”, in European Solid-State Circuits Conference, 2005, pp. 363-366.
J. Boley, Wang, J., and Calhoun, B. H., “Analyzing Sub-Threshold Bitcell Topologies and the Effects of Assist Methods on SRAM Vmin”, Journal of Low Power Electronics and Applications, 2012.
J. Boley, Wang, J., and Calhoun, B. H., “Analyzing Sub-Threshold Bitcell Topologies and the Effects of Assist Methods on SRAM VMIN”, Journal of Low Power Electronics and Applications (JLPEA), vol. 2, p. 12, 2012.
J. Boley, Calhoun, B. H., and Wang, J., “Analyzing Subthreshold Bitcell Topologies and the Effects of Assist Methods on SRAM Vmin”. 2011.
H. L. Bishop, Wang, P., and Calhoun, B. H., “Application-Driven Model of a PPG Sensing Modality for the Informed Design of Self-Powered, Wearable Healthcare Systems”, in 2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020.
S. Nalam, Chandra, V., Pietrzyk, C., Aitken, R. C., and Calhoun, B. H., “Asymmetric 6T SRAM with Two-phase Write and Split Bitline Differential Sensing for Low Voltage Operation”, in ISQED, 2010, pp. 139-146.
S. Nalam and Calhoun, B. H., “Asymmetric Sizing in a 45nm 5T SRAM to Improve Read Stability over 6T”, in CICC, 2009, pp. 709-712.
S. Z. Ahmed, Tan, Y., Truesdell, D. S., and Ghosh, A., “Auger Effect Limited Performance in Tunnel Field Effect Transistors”, in 5th Berkeley Symposium on Energy Efficient Electronics & Steep Transistors Workshop, Berkeley, CA, 2017.
S. Kamineni, Sharma, A., Harjani, R., Sapatnekar, S. S., and Calhoun, B. H., “AuxcellGen: A Framework for Autonomous Generation of Analog and Memory Unit Cells”, in Design, Automation and Test in Europe Conference (DATE), 2023, 2023.PDF icon AuxcellGen-A Framework for Autonomous Generation of Analog and Memory Unit Cells.pdf (3.37 MB)