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In Press
O. Faruqe, Chen, Z., Bhattacharya, S., Foysal, M. Fahim, Hasan, S., Truesdell, D. S., and Calhoun, B. H., A 0.36 mm² On-the-Fly I2C-to-SPI Converter for E-Textile Applications, in 2025 IEEE International Symposium on Circuits and Systems (ISCAS), In Press.
A. Tanaka, He, S., Mounesi, R., Liu, X., Faruqe, O., Mim, N. Gahan, Truesdell, D. S., Nasiri, A., and Calhoun, B. H., An 81.0% Peak Efficiency, 1.0W/cm^3 Miniaturized 5V/1A AC-DC Converter using a Highly-Integrated Primary-Side Active Clamp Flyback Controller with Adaptive Frequency and Zero-Voltage Switching, in 2025 IEEE Custom Integrated Circuits Conference (CICC), In Press.
A. Agrawal, Liu, X., Truesdell, D. S., and Calhoun, B. H., Characterization of Stacked PV Cell Configurations in a Deep N-Well 65nm CMOS Technology, in 2025 IEEE International Symposium on Circuits and Systems (ISCAS), In Press.
O. Faruqe, Le, P., Lee, D., Liu, X., Abdelatty, O., Truesdell, D. S., and Calhoun, B. H., A Fully Integrated, Custom End-to-End PPG Sensing System for Ultra-Low Power Wearables, in 2025 IEEE International Symposium on Circuits and Systems (ISCAS), In Press.
Z. Chen, Desman, B. E., Agrawal, A., Farrell, W., Owens, J., Truesdell, D. S., and Calhoun, B. H., ISPI: A 2-Wire Improved Serial Peripheral Interface with Automatic Routing Algorithm for 2-D In-Textile Distributed Computing and Storage Systems, in 2025 IEEE Custom Integrated Circuits Conference (CICC) , In Press.
2020
D. S. Truesdell, Li, S., and Calhoun, B. H., A 0.5V 560kHz 18.8fJ/Cycle Ultra-Low Energy Oscillator in 65nm CMOS with 96.1ppm/°C Stability Using a Duty-Cycled Digital Frequency-Locked Loop, in 2020 IEEE Symposium on VLSI Circuits (VLSI), 2020.PDF icon A 0.5V 560kHz 18.8fJ_Cycle Ultra-Low Energy Oscillator in 65nm CMOS with 96.1ppm_C Stability Using a Duty-Cycled Frequency-Locked Loop.pdf (2.67 MB)
A. Dissanayake, Moody, J., Bishop, H. L., Truesdell, D. S., Muhlbauer, H., Lu, R., Gao, A., Gong, S., Calhoun, B. H., and Bowers, S. M., A -108dBm Sensitivity, -28dB SIR, 130nW to 41μW, Digitally Reconfigurable Bit-Level Duty-Cycled Wakeup and Data Receiver, in IEEE Custom Integrated Circuits Conference (CICC), 2020.
S. Gupta, Truesdell, D. S., and Calhoun, B. H., A 65nm 16kb SRAM with 131.5pW Leakage at 0.9V for Wireless IoT Sensor Nodes, in 2020 IEEE Symposium on VLSI Circuits (VLSI), 2020.PDF icon A 65nm 16kb SRAM with 131.5pW Leakage at 0.9V for Wireless IoT Sensor Nodes.pdf (935.56 KB)
S. Z. Ahmed, Truesdell, D. S., Tan, Y., Calhoun, B. H., and Ghosh, A. W., A comprehensive analysis of Auger generation impacted planar Tunnel FETs, Solid-State Electronics, 2020.
A. Alghaihab, Chen, X., Shi, Y., Truesdell, D. S., Calhoun, B. H., and Wentzloff, D. D., A Crystal-Less BLE Transmitter with -86dBm Frequency-Hopping Back-Channel WRX and Over-the-Air Clock Recovery from a GFSK-Modulated BLE Packet, in 2020 IEEE International Solid-State Circuits Conference (ISSCC), 2020.
D. S. Truesdell, Ahmed, S. Z., Ghosh, A. W., and Calhoun, B. H., Minimum-Energy Digital Computing with Steep Subthreshold Swing Tunnel FETs, IEEE Journal of Exploratory Solid-State Computational Devices and Circuits (JxCDC), 2020.PDF icon Minimum-Energy Digital Computing With Steep Subthreshold Swing Tunnel FETs.pdf (1.02 MB)
D. S. Truesdell and Calhoun, B. H., A Single-Supply 6-Transistor Voltage Level Converter Design Reaching 8.18-fJ/Transition at 0.3-1.2-V Range or 44-fW Leakage at 0.8-2.5-V Range, IEEE Solid-State Circuits Letters (SSCL), 2020.PDF icon A Single-Supply 6-Transistor Voltage Level Converter Design Reaching 8.18-fJ_Transition at 0.3-1.2-V Range or 44-fW Leakage at 0.8-2.5-V Range.pdf (1.06 MB)
P. Bassirian, Duvvuri, D., Truesdell, D. S., Liu, N. X., Calhoun, B. H., and Bowers, S. M., A Temperature-robust 27.6nW -65dBm Wakeup Receiver at 9.6GHz X Band, in 2020 IEEE International Solid-State Circuits Conference (ISSCC), 2020.
A. Mallick, Bashar, M. K., Truesdell, D. S., Calhoun, B. H., Joshi, S., and Shukla, N., Using synchronized oscillators to compute the maximum independent set, Nature Communications, 2020.

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