Static metrics for SRAM read and write stability do not take into account the dynamic nature of these operations. They are either pessimistic or optimistic in predicting cell failure due to the assumption of an infinite word-line (WL) pulse. In this project, we investigate TCRIT, the minimum WL pulse required for the cell to flip, as a dynamic measure of cell writability. We also explore models, both analytical and fast-simulation, that capture the statistics of dynamic margin in SRAM.
Faculty: Ben Calhoun Students: Jim Boley Industry: Vikas Chandra, Rob Aitken (ARM) Publications: