A 130nm Canary SRAM for SRAM Dynamic Write VMIN Tracking across Voltage, Frequency, and Temperature Variations

In this paper, we show the first silicon results of a working 512b canary SRAM using reverse assist in 130nm bulk technology which can be tuned to fail earlier than the 8Kb SRAM fails by tuning the bitline or wordline type reverse assists. We further show that this tuning is possible across voltage, frequency, and temperature variations. We report that the 512b canary SRAM has 60% less power consumption than the 8Kb SRAM at 100MHz.

Publications:
Banerjee, A., J. Breiholz, and B. H. Calhoun, "A 130nm Canary SRAM for SRAM Dynamic Write VMIN Tracking across Voltage, Frequency, and Temperature Variations", Custom Integrated Circuits Conference (CICC), San Jose, CA, IEEE, 09/2015.

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