Impact of circuit assist methods on margin and performance in 6T SRAM

TitleImpact of circuit assist methods on margin and performance in 6T SRAM
Publication TypeJournal Article
Year of Publication2010
AuthorsMann, R. W., J. Wang, S. Nalam, S. Khanna, G. Braceras, H. Pilo, and B. H. Calhoun
JournalJournal of Solid State Electronics
Volume54
Start Page1398
Pagination1398-1407
Date Published11/2010
KeywordsProcess variation, Read assist, Scaling, SNM, SRAM, Vmin, Write assist, Write margin, Yield
URLhttp://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TY5-50GTRCY-1&_user=709071&_coverDate=11%2F30%2F2010&_rdoc=1&_fmt=high&_orig=search&_sort=d&_docanchor=&view=c&_acct=C000039638&_version=1&_urlVersion=0&_userid=709071&md5=2d0ef46bf2e72b91309a5c16
Citation Key69
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