Dynamic stability

Static metrics for SRAM read and write stability do not take into account the dynamic nature of these operations. They are either pessimistic or optimistic in predicting cell failure due to the assumption of an infinite word-line (WL) pulse. In this project, we investigate TCRIT, the minimum WL pulse required for the cell to flip, as a dynamic measure of cell writability. We also explore models, both analytical and fast-simulation, that capture the statistics of dynamic margin in SRAM.

Faculty:
Ben Calhoun

Students:
Jim Boley

Industry:
Vikas Chandra, Rob Aitken (ARM)

Publications:
Boley, J., J. Wang, and B. H. Calhoun, "Analyzing Sub-Threshold Bitcell Topologies and the Effects of Assist Methods on SRAM Vmin", Journal of Low Power Electronics and Applications, 04/2012.

Nalam, S., V. Chandra, R. C. Aitken, and B. H. Calhoun, "Dynamic Write Limited Minimum Operating Voltage for Nanoscale SRAM", Design Automation and Test Europe (DATE), 03/2011.

Wang, J., S. Nalam, and B. H. Calhoun, "Analyzing Static and Dynamic Write Margin for Nanometer SRAMs", International Symposium on Low Power Electronics and Design, pp. 129-134, 08/2008.