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In this paper, we propose a 9T half-select-free subthreshold bitcell that has 2.05X lower mean read energy, 12.39% lower mean write energy, and 28% lower mean leakage current than conventional 8T bitcells at the TT_0.4V_27C corner. Our bitcell also supports the bitline interleaving technique that can cope with soft errors.
In this project, 5T and 6T cells that use asymmetric sizing and single-ended read to achieve better trade-offs between noise margins, power, performance, and area. A new pseudo differential sensing scheme for single-ended cells is also explored.
Professor Ben Calhoun
Arijit Banerjee, Satya Nalam
Asymmetric 6T - Vikas Chandra, Cezary Pietrzyk, Rob Aitken (ARM)
5T - Alexander Hoefler (Freescale)
"An Ultra-Low Energy Subthreshold SRAM Bitcell for Energy Constrained Biomedical Applications", Journal of Low Power Electronics and Applications (JLPEA), vol. 4, issue 2, pp. 19, 05,2014.
"An Ultra Low Energy 9T Half-select-free Subthreshold SRAM bitcell", S3S, Monterey, CA, 2013.
"Asymmetric 6T SRAM with Two-phase Write and Split Bitline Differential Sensing for Low Voltage Operation", ISQED, pp. 139-146, 2010.
"Asymmetric Sizing in a 45nm 5T SRAM to Improve Read Stability over 6T", CICC, pp. 709-712, 2009.